Semiconductor developer Weebit Nano (ASX: WBT), has updated the market with successful early results regarding its first 4Kb array wafers on 40nm memory size, and demonstrating a capability of “more than 99% working cells inside an array,” according to Weebit.
The test result are significant as it indicates Weebit’s next-generation of semiconductors used in memory cells are on-track to outperform existing flash memory technology in terms of reliability and working cell integrity.
Weebit is seeking to develop and commercialise the next generation of memory technology that offers significant operational advantages over existing flash memory.
In November of last year, Weebit demonstrated a 40nm working memory cell one month ahead of schedule, indicating its strong intention to become a commercially active company as soon as possible.
Today’s news of Weebit scaling up the single memory cell into a 4Kb array, with “no degradation due to scaling,” is a strong leading indicator that Weebit may achieve its ultimate goal of creating a 40nm 1Mb array — comparatively 250-times larger than the array announced today — later this year.
“We are very encouraged with the results our dedicated team have achieved, which demonstrates that our next generation memory technology is scalable. Having achieved the 40nm working cell, the next challenge was to build memory arrays of multiple cells. The 4Kb results show that our technology can scale up its capacity, and we now look forward to achieving the 1Mb array milestone by mid-2018,” said Coby Hanoch, CEO of Weebit Nano.
Silicon oxide enables optimal memory storage
The core ingredient that underpins Weebit’s memory-cell development is silicon oxide within its memory cells, considered the best-known material with which to achieve further improvements in cell capacity and reliability.
By focusing on the right materials and collaborating with globally-renowned chemists such as Dr James Tour from Rice University, Weebit is making rapid strides forward in developing the next evolution of memory-storage: Resistive Random Access Memory (ReRAM).
ReRAM storage stores data by creating resistance in a circuit rather than trapping electrons within a cell, which is the current method used by flash memory. This key difference makes ReRAM more efficient, and therefore, more commercially viable.
“We have achieved more in under two years than other companies have managed in up to ten, and we believe this speed to market is a significant competitive advantage for us. Our team is now laying out plans for memory integration at more advanced scalable technology nodes”, said Mr Hanoch.
ReRAM memory has the potential to push existing memory performance up to 1,000 times further, reduce data corruption, significantly reduce energy consumption and cost, and possibly most interesting for end-users — Weebit’s ReRAM technology will help to miniaturise existing semiconductors to the point of making even the smallest electronic devices able to have high memory capacities.